Investigation of Maximum Junction Temperature for 4H-SiC MOSFET During Unclamped Inductive Switching Test

被引：14

作者：

An, Junjie ^{[1
]}

Namai, Masaki ^{[1
]}

Okamoto, Dai ^{[1
]}

Yano, Hiroshi ^{[1
]}

Tadano, Hiroshi ^{[1
]}

Iwamuro, Noriyuki ^{[1
]}

机构：

[1] Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki, Japan

来源：

ELECTRONICS AND COMMUNICATIONS IN JAPAN | 2018年 / 101卷 / 01期

关键词：

maximum junction temperature; SiC MOSFET; unclamped inductive switching;

D O I：

10.1002/ecj.12018

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Normally, thermal breakdown is one of the serious failure phenomena in the power device application, which drives the researchers to focus on exploration of the failure mechanism and the new evaluation method for power device. In this paper, unclamped inductive switching test is presented to evaluate energy handing ability and maximum junction temperature of 1200 V/19 A SiC MOSFET during avalanche mode. It is verified that commercial 1200 V/19 A SiC MOSFET can easily withstand almost 10 s avalanche time and around 924 K maximum junction temperature with 1 mH inductance and 400 V dc bus at the case temperature of 300 K in avalanche mode. In addition, three reasonable evaluation methods of the maximum junction temperature for SiC MOSFET are summarized at different case temperatures.

引用

页码：24 / 31

页数：8

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