Molecular dynamics simulations of ionized cluster beam deposition: case of study of aluminum

被引:21
作者
Kang, JW [1 ]
Hwang, HJ [1 ]
机构
[1] Chung Ang Univ, Dept Elect Engn, Semicond Proc & Devices Lab, DongJak Ku, Seoul 156756, South Korea
关键词
cluster deposition; molecular dynamics simulation; correlated collisions;
D O I
10.1016/S0927-0256(01)00199-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In order to understand interactions between energetic Al clusters and Al(1 0 0) surfaces, we investigated the cluster-size dependence of the maximum substrate temperature T-max and of the time t(max) within which this temperature is reached. We considered two cases: (1) clusters with the same total energy E-T and (2) clusters with the same energy per atom. The temperature T-max changed linearly with both the energy per atom and the total energy of the cluster. When E-T was constant and the cluster size increased, the time t(max) approached a constant value because energy was rapidly transferred to the substrate by correlated collisions. As the size and energy of clusters increase, such correlated collisions play a progressively important role in their interactions with surfaces. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:509 / 514
页数:6
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