Breakdown effects on MOS varactors and VCO's

被引：0

作者：

Sadat, A ^{[1
]}

Yang, H ^{[1
]}

Xiao, EJ ^{[1
]}

Yuan, JS ^{[1
]}

机构：

[1] Univ Cent Florida, Chip Design & Reliabil Lab, Orlando, FL 32826 USA

来源：

PROCEEDINGS OF THE 2003 IEEE INTERNATIONAL FREQUENCY CONTROL SYMPOSIUM & PDA EXHIBITION JOINTLY WITH 17TH EUROPEAN FREQUENCY AND TIME FORUM | 2003年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The gate oxide breakdown effects of deep sub-micron devices, which degrade the performance of MOS varactors that in turn degrade the performance of LC Voltage Controlled Oscillators (VCO's), are presented. On wafer 0.16 mum CMOS devices are stressed; experimental data are analyzed and used for analytical derivations and simulations to show that the breakdown has twofold effects on the performance of the VCO's. Firstly, the increased conductance of the varactor degrades its quality, which increases the phase noise of the VCO's. This also reduces the amplitude at the output of the oscillator. Secondly, the value of the capacitance of the MOS varactor reduces, which shifts the oscillation frequency of the VCO's.

引用

页码：556 / 559

页数：4