A New Methodology for Assessment of the Susceptibility to Data Retention in Floating Gate Non-Volatile Memories

被引：0

作者：

Shih, Chih-Ching ^{[1
]}

Lee, Ming-Yi ^{[1
]}

Ku, Shaw-Hung ^{[1
]}

Lee, Lien-Feng ^{[1
]}

Kuo, Li-Kuang ^{[1
]}

Tsai, Wen-Jer ^{[1
]}

Lin, D. J. ^{[1
]}

Lu, Wen-Pin ^{[1
]}

Lu, Tao-Chen ^{[1
]}

Chen, Kuang-Chao ^{[1
]}

Chao, Yen-Hie ^{[1
]}

Lu, Chih-Yuan ^{[1
]}

机构：

[1] Macronix Int Co Ltd, 16 Li Hsin Rd, Hsinchu, Taiwan

来源：

2017 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2017年

关键词：

Leakage current; Methodology; Nonvolatile memory; Reliability; Simulation;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed a new methodology with statistical simulation of leakage current resulting in V-t shift over time of tail bit for assessment of the susceptibility to data retention in floating gate flash memories. The statistical simulation results of V-t distribution are verified with measurements of programmed bit in actual product with good agreement. The new methodology can effectively predict the V-t distribution of programmed bit for determining the data retention failure rate of floating gate non-volatile memories without multi-year bakes and analyzing the leakage mechanism of concern for our process and design.

引用

页数：4

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