Nanoscale control of exchange bias with BiFeO3 thin films

被引:264
作者
Martin, Lane W. [1 ,2 ]
Chu, Ying-Hao [1 ,3 ]
Holcomb, Mikel B. [1 ,3 ]
Huijben, Mark [3 ]
Yu, Pu [3 ]
Han, Shu-Jen [4 ]
Lee, Donkoun [4 ]
Wang, Shan X. [4 ]
Ramesh, R. [1 ,2 ,3 ]
机构
[1] Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
[3] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
[4] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
关键词
D O I
10.1021/nl801391m
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We demonstrate a direct correlation between the domain structure of multiferroic BiFeO3 thin films and exchange bias of Co0.9Fe0.1/BiFeO3 heterostructures. Two distinct types of interactions-an enhancement of the coercive field (exchange enhancement) and an enhancement of the coercive field combined with large shifts of the hysteresis loop (exchange bias) - have been observed in these heterostructures, which depend directly on the type and crystallography of the nanoscale (similar to 2 nm) domain walls in the BiFeO3 film. We show that the magnitude of the exchange bias interaction scales with the length of 109, ferroelectric domain walls in the BiFeO3 thin films which have been probed via piezoresponse force microscopy and X-ray magnetic circular dichroism.
引用
收藏
页码:2050 / 2055
页数:6
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