Electron beam induced current profiling of ZnO p-n homojunctions

被引：10

作者：

Chernyak, L. ^{[1
]}

Schwarz, C. ^{[1
]}

Flitsiyan, E. S. ^{[1
]}

Chu, S. ^{[2
]}

Liu, J. L. ^{[2
]}

Gartsman, K. ^{[3
]}

机构：

[1] Univ Cent Florida, Dept Phys, Orlando, FL 32816 USA

[2] Univ Calif Riverside, Dept Elect Engn, Riverside, CA 92521 USA

[3] Weizmann Inst Sci, IL-76100 Rehovot, Israel

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 10期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2896613

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Variable temperature electron beam induced current technique was employed for the profiling of ZnO p-n homojunctions and the extraction of minority electron diffusion length values in the Sb-doped p-type ZnO region. A thermally induced increase for diffusion length of minority electrons was determined to have an activation energy of similar to 145 meV. The latter parameter likely represents carrier delocalization energy and determines the increase of the diffusion length due to the reduction in recombination efficiency. (c) 2008 American Institute of Physics.

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页数：3

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