Critical Transport in Weakly Disordered Semiconductors and Semimetals

被引:104
作者
Syzranov, S. V. [1 ]
Radzihovsky, L. [1 ]
Gurarie, V. [1 ]
机构
[1] Univ Colorado, Dept Phys, Boulder, CO 80309 USA
基金
美国国家科学基金会;
关键词
TOPOLOGICAL DIRAC SEMIMETAL; CRITICAL-BEHAVIOR; DEGENERATE SEMICONDUCTORS; TRANSITION; PHASE;
D O I
10.1103/PhysRevLett.114.166601
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Motivated by Weyl semimetals and weakly doped semiconductors, we study transport in a weakly disordered semiconductor with a power-law quasiparticle dispersion xi(k) proportional to k(alpha). We show, that in 2 alpha dimensions short-correlated disorder experiences logarithmic renormalization from all energies in the band. We study the case of a general dimension d using a renormalization group, controlled by an epsilon = 2 alpha - d expansion. Above the critical dimensions, conduction exhibits a localization-delocalization phase transition or a sharp crossover (depending on the symmetries of the Hamiltonian) as a function of disorder strength. We utilize this analysis to compute the low-temperature conductivity in Weyl semimetals and weakly doped semiconductors near and below the critical disorder point.
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页数:5
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