Formation of basal plane Frank-type faults in 4H-SiC epitaxial growth

被引：71

作者：

Tsuchida, H. ^{[1
]}

Kamata, I. ^{[1
]}

Nagano, M. ^{[1
]}

机构：

[1] Cent Res Inst Elect Power Ind, Kanagawa 2400196, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2008年 / 310卷 / 04期

关键词：

characterization; line defects; planar defects; vapor phase epitaxy; silicon carbide; semiconducting materials;

D O I：

10.1016/j.jcrysgro.2007.11.156

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Formation of Frank-type faults on the basal plane in 4H-SiC{0 0 0 1} epitaxial growth has been investigated by grazing incidence synchrotron reflection X-ray topography and transmission electron microscopy. The Frank faults, which are formed by conversion of a 1c threading screw dislocation (TSD) in the substrate as well as simultaneous generation of a le TSD during epitaxial growth, are confirmed to be created by four Frank partials with a Burgers vector of 1/4[0 0 0 1] type having the same sign on four different basal planes. The fine features of the X-ray topography contrast are confirmed to reflect the microscopic structure of the Frank faults. A variety of Frank fault formation has been revealed by comparing topography images taken before and after epitaxial growth. The formation mechanism of the Frank faults is discussed based on the evaluated microscopic structures. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：757 / 765

页数：9

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