Formation of masking pattern by electron beam-induced vapor deposition

被引：1

作者：

Bruk, M. A. ^{[1
]}

Zhikharev, E. N. ^{[2
]}

Shevchuk, S. L. ^{[2
]}

Volegova, I. A. ^{[1
]}

Spirin, A. V. ^{[1
]}

Teleshov, E. N. ^{[1
]}

Kal'nov, V. A. ^{[2
]}

Maishev, Yu. P. ^{[2
]}

机构：

[1] LY Karpov Phys Chem Res Inst, Moscow 103064, Russia

[2] Russian Acad Sci, Physicotechnol Inst, Moscow 117218, Russia

来源：

HIGH ENERGY CHEMISTRY | 2008年 / 42卷 / 02期

关键词：

Etching Rate; High Energy Chemistry; Masking Pattern; Line Height; Mask Material;

D O I：

10.1134/S0018143908020082

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The dry resist-free process of electron beam-induced masking via chemical vapor deposition from a hydrocarbon precursor was studied. It was shown that the obtained mask exhibited a low selectivity during ion beam etching with SF6 ions. It was found that, during mask deposition, a thin (of the order of 1 nm) boundary layer is formed on the SiO2 plate surface; the layer had a substantially higher plasma resistance and, hence, high selectivity upon ion beam etching of SiO2. Certain features of the masking process and the properties of the mask material were studied.

引用

页码：105 / 112

页数：8

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