Formation of masking pattern by electron beam-induced vapor deposition

被引：1
|
作者：
Bruk, M. A. [1 ]
Zhikharev, E. N. [2 ]
Shevchuk, S. L. [2 ]
Volegova, I. A. [1 ]
Spirin, A. V. [1 ]
Teleshov, E. N. [1 ]
Kal'nov, V. A. [2 ]
Maishev, Yu. P. [2 ]
机构：
[1] LY Karpov Phys Chem Res Inst, Moscow 103064, Russia
[2] Russian Acad Sci, Physicotechnol Inst, Moscow 117218, Russia
来源：
HIGH ENERGY CHEMISTRY | 2008年 / 42卷 / 02期
关键词：
Etching Rate; High Energy Chemistry; Masking Pattern; Line Height; Mask Material;
D O I：
10.1134/S0018143908020082
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The dry resist-free process of electron beam-induced masking via chemical vapor deposition from a hydrocarbon precursor was studied. It was shown that the obtained mask exhibited a low selectivity during ion beam etching with SF6 ions. It was found that, during mask deposition, a thin (of the order of 1 nm) boundary layer is formed on the SiO2 plate surface; the layer had a substantially higher plasma resistance and, hence, high selectivity upon ion beam etching of SiO2. Certain features of the masking process and the properties of the mask material were studied.
引用
收藏
页码：105 / 112
页数：8
相关论文
共 50 条
  • [1] Formation of masking pattern by electron beam-induced vapor deposition
    M. A. Bruk
    E. N. Zhikharev
    S. L. Shevchuk
    I. A. Volegova
    A. V. Spirin
    E. N. Teleshov
    V. A. Kal’nov
    Yu. P. Maishev
    High Energy Chemistry, 2008, 42 : 105 - 112
  • [2] Features of resist-free formation of masking pattern by electron beam-induced vapor deposition
    Bruk, M. A.
    Zhikharev, E. N.
    Shevchuk, S. L.
    Volegova, I. A.
    Spirin, A. V.
    Teleshov, E. N.
    Kal'nov, V. A.
    Maishev, Yu. P.
    HIGH ENERGY CHEMISTRY, 2008, 42 (05) : 360 - 365
  • [3] Features of resist-free formation of masking pattern by electron beam-induced vapor deposition
    M. A. Bruk
    E. N. Zhikharev
    S. L. Shevchuk
    I. A. Volegova
    A. V. Spirin
    E. N. Teleshov
    V. A. Kal’nov
    Yu. P. Maishev
    High Energy Chemistry, 2008, 42 : 360 - 365
  • [4] Carbon nanopillar laterally grown with electron beam-induced chemical vapor deposition
    Fujita, J
    Ishida, M
    Ichihashi, T
    Ochiai, Y
    Kaito, T
    Matsui, S
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (06): : 2990 - 2993
  • [5] Mechanisms of crystalline iron oxide formation in electron beam-induced deposition
    Shimojo, Masayuki
    Takeguchi, Masaki
    Mitsuishi, Kazutaka
    Tanaka, Miyoko
    Furuya, Kazuo
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (9B): : 6247 - 6249
  • [6] Electron beam-induced carbon masking for electrodeposition on semiconductor surfaces
    Djenizian, T
    Santinacci, L
    Schmuki, P
    APPLIED PHYSICS LETTERS, 2001, 78 (19) : 2940 - 2942
  • [7] Focused electron beam-induced deposition at cryogenic temperatures
    M. Bresin
    B. L. Thiel
    M. Toth
    K. A. Dunn
    Journal of Materials Research, 2011, 26 : 357 - 364
  • [8] Fabrication of nanofigures by focused electron beam-induced deposition
    Ueda, K
    Yoshimura, M
    THIN SOLID FILMS, 2004, 464 : 331 - 334
  • [9] Focused electron beam-induced deposition at cryogenic temperatures
    Bresin, M.
    Thiel, B. L.
    Toth, M.
    Dunn, K. A.
    Toth, M.
    JOURNAL OF MATERIALS RESEARCH, 2011, 26 (03) : 357 - 364
  • [10] Formation of crystalline iron oxide nanostructures by electron beam-induced deposition at room temperature
    Shimojo, M.
    Takeguchi, M.
    Furuya, K.
    NANOTECHNOLOGY, 2006, 17 (15) : 3637 - 3640
12345