A Surface Potential Based Quasi-Ballistic Double Gate MOSFET Model

被引：0

作者：

Huang, Jin ^{[1
,2
]}

Zhang, Ganggang ^{[2
]}

Liu, Xiaoyan ^{[2
]}

Du, Gang ^{[2
]}

机构：

[1] Peking Univ, Shenzhen Grad Sch, Sch ECE, Shenzhen 518055, Peoples R China

[2] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

来源：

PROCEEDINGS OF THE 2015 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2015年

关键词：

MOSFET model; Quasi-Ballistic Transport; Double-Gate Model;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A double gate MOSFET model is developed with surface potential based charge model and quasi-ballistic transport based velocity model with only one extracted parameter. Compared to the traditional drift-diffusion model, the quasi-ballistic transport velocity model can describe the I-V characteristics better for sub-30nm MOSFET. Besides, a completely surface potential based charge model with both dope and inversion charge is more accurate at smaller feature size. This model is verified by numerical simulations at the end of this paper.

引用

页码：467 / 470

页数：4

共 17 条

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