A new empirical I-V model for HEMT devices

被引：18

作者：

Chen, YC ^{[1
]}

Ingram, DL ^{[1
]}

Yen, HC ^{[1
]}

Lai, R ^{[1
]}

Streit, DC ^{[1
]}

机构：

[1] TRW Co Inc, Div Elect & Technol, Redondo Beach, CA 90278 USA

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1998年 / 8卷 / 10期

关键词：

D O I：

10.1109/75.735415

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed a new empirical model to represent the current-voltage (T-V) characteristics of HEMT devices. This model is simple and yet capable of representing the HEMT I-V characteristics with high accuracy. Excellent modeling of the measured drain current, its first (transconductance), second, and third derivatives with respect to gate voltage for multiple drain biases is demonstrated. A simple model extraction procedure has been developed and is described in the letter.

引用

页码：342 / 344

页数：3

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