Effect of annealing temperature on p-n junction formation in Cu2SnS3 thin-film solar cells fabricated via the co-evaporation of elemental precursors

被引：5

作者：

Motai, Daiki ^{[1
]}

Ohashi, Ryota ^{[1
]}

Araki, Hideaki ^{[1
]}

机构：

[1] Nagaoka Coll, Natl Inst Technol KOSEN, Dept Mat Engn, 888 Nishikatakai, Nagaoka, Niigata 9408532, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2022年 / 61卷 / SB期

基金：

日本学术振兴会;

关键词：

Cu2SnS3; thin-films; solar cells; co-evaporation; annealing; SULFURIZATION; EFFICIENCIES; IMPACT;

D O I：

10.35848/1347-4065/ac2e56

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Cu2SnS3 (CTS) thin-film solar cells were fabricated by the co-evaporation of the precursors, and the effect of annealing in N-2 atmosphere on their photovoltaic properties was investigated by varying the annealing temperature after the chemical bath deposition of CdS. The characteristics of the solar cells improved as the annealing temperature was increased in the 250 degrees C-275 degrees C range (annealing time: 30 min). However, annealing temperatures exceeding 275 degrees C caused the deterioration of the device characteristics. Therefore, annealing in the 250 degrees C-275 degrees C range after CdS deposition is important for forming an optimum p-n junction at the CTS/CdS interface for manufacturing the CTS solar cells evaluated in this study. The best-performing solar cell fabricated using a CTS film annealed at 275 degrees C after CdS deposition exhibited an open circuit voltage of 0.181 V, with a short circuit current density of 20.9 mA cm(-2), fill factor of 0.462, and power conversion efficiency of 1.74%.

引用

页数：5