Impurity-free seeded crystallization of amorphous silicon by nanoindentation

被引：0

作者：

Ruffell, S. ^{[1
]}

Knights, A. P. ^{[2
]}

Bradby, J. E. ^{[1
]}

Williams, J. S. ^{[1
]}

机构：

[1] Australian Natl Univ, Dept Elect Mat Engn, Res Sch Phys & Engn, Canberra, ACT 0200, Australia

[2] McMaster Univ, Dept Engn Phys, Hamilton, ON L8S 4L7, Canada

来源：

JOURNAL OF APPLIED PHYSICS | 2011年 / 110卷 / 08期

基金：

澳大利亚研究理事会; 加拿大自然科学与工程研究理事会;

关键词：

INDUCED PHASE-TRANSFORMATION; AL-INDUCED CRYSTALLIZATION; LATERAL CRYSTALLIZATION; SI; INDENTATION; FILMS; GRAIN; TFT; FABRICATION; CIRCUITS;

D O I：

10.1063/1.3647587

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate that nanoindents formed in amorphous Si films, with dimensions as small as similar to 20 nm, provide a means to seed solid phase crystallization. During post-indentation annealing at similar to 600 degrees C, solid phase crystallization initiates from the indented sites, effectively removing the incubation time for random nucleation in the absence of seeds. The seeded crystallization is studied by optical microscopy, cross-sectional transmission electron microscopy, and electrical characterization via Hall measurements. Full crystallization can be achieved, with improved electrical characteristics attributed to the improved microstructure, using a lower thermal budget. The process is metal contaminant free and allows for selective area crystallization. (C) 2011 American Institute of Physics. [doi:10.1063/1.3647587]

引用

页数：4

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