High reliability, high power arrays of 808 nm single mode diode lasers employing various quantum well structures

被引：1
作者：
Qiu, B. C. [1 ]
Kowalski, O. [1 ]
McDougall, S. D. [1 ]
Liu, X. F. [1 ]
Marsh, J. H. [1 ]
机构：
[1] Intense Ltd, Glasgow G72 0BN, Lanark, Scotland
来源：
NOVEL IN-PLANE SEMICONDUCTOR LASERS VII | 2008年 / 6909卷
关键词：
808; nm; single mode; diode lasers; high reliability;
D O I：
10.1117/12.763208
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Single mode laser diode arrays operating at 808 run have been designed and fabricated using several different waveguide and quantum well combinations. In order to operate these devices at 200 mW per element a quantum well intermixing process has been used to render their facets non-absorbing and thus they do not suffer from mirror damage related failure. In this paper we demonstrate extremely high levels of reliability for GaAs and AlGaAs quantum well devices with arrays of 64 elements completing over 6000 hours continuous operation without any single laser element failure and a correspondingly low power degradation rate of < 1% k/hr. In contrast we show extremely high power degradation rates for arrays using InGaAs and InAlGaAs 808 nm quantum wells laser arrays.
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页数：9
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