Enhancement of electron field emission by carbon coating on vertically aligned Si nanowires

被引：20
|
作者：
Das, N. S. [2 ]
Banerjee, D. [2 ]
Chattopadhyay, K. K. [1 ,2 ]
机构：
[1] Jadavpur Univ, Dept Phys, Thin Film & NanoSci Lab, Kolkata 700032, India
[2] Jadavpur Univ, Sch Mat Sci & Nanotechnol, Kolkata 700032, India
来源：
APPLIED SURFACE SCIENCE | 2011年 / 257卷 / 22期
关键词：
Silicon nanowire; Amorphous carbon coating; FESEM; Field emission; SILICON NANOWIRE; FABRICATION;
D O I：
10.1016/j.apsusc.2011.06.091
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Electron field emission properties of vertically aligned Si nanowires, synthesized by chemically etching p-type Si wafers with different etching times were investigated in detail. Fabrication of Si nanowires was confirmed by field emission scanning electron microscopic investigation. It was observed that a thin layer of amorphous carbon coating over the grown Si nanowires enhanced the field emission properties significantly. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：9649 / 9653
页数：5
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