Magnetic properties and viscosity effect of L10 FePt film with GePt underlayer

被引:3
作者
Tsai, J. L. [1 ]
Hsu, C. J. [1 ]
机构
[1] Natl Chung Hsing Univ, Dept Mat Engn, Taichung 402, Taiwan
关键词
L1(0) FePt; coercivity; island-like;
D O I
10.1016/j.jallcom.2007.01.157
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We explored the GePt underlayer thickness effect on the magnetic properties and microstructure of L1(0) FePt film. The GePt underlayer was deposited on quartz at 800 degrees C and the thickness changed from 10 to 120nm. The Ge2Pt3 compound was formed and the island-like structure was able to relax the growth stress between Ge2Pt3 and quartz when the thickness is smaller than 60 nm. After FePt deposition, the bilayer was post-annealed at 400 degrees C. In plane coercivity (H-c) decreased from 14 to 2 kOe when the underlayer thickness increased from 10 to 120 nm. First, we suggested L1(0) FePt film is higher ordered (S = 0.71-0.93) on the island-like underlayer and the coercivity are larger than 8 kOe. It is because the island-like Ge2Pt3 induced tensile stress on FePt, which enhanced the formation of ordered FePt. The obstacles or pinning sites created by Ge2Pt3 island-like surface morphology makes FePt domain wall motion lagging and the coercivity become larger. But the inter-diffusion effect still exists for film with 10 nm Ge2Pt3 underlayer at 400 degrees C. Second, with underlayer thickness 120 nm, the Ge atoms diffused into the FePt film that suppressed the ordering with parameter S = 0.49 and the coercivity was 2 kOe. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:87 / 91
页数:5
相关论文
共 17 条
[1]   Calorimetric studies of the A1 to L10 transformation in FePt and related ternary alloy thin films [J].
Barmak, K ;
Kim, J ;
Berry, DC ;
Wierman, KW ;
Svedberg, EB ;
Howard, JK .
JOURNAL OF APPLIED PHYSICS, 2004, 95 (11) :7486-7488
[2]   MODELS OF SLOW RELAXATION IN PARTICULATE AND THIN-FILM MATERIALS (INVITED) [J].
CHANTRELL, RW ;
LYBERATOS, A ;
ELHILO, M ;
OGRADY, K .
JOURNAL OF APPLIED PHYSICS, 1994, 76 (10) :6407-6412
[3]   Effect of NiAl intermediate layer on structural and magnetic properties of L10 FePt films with perpendicular anisotropy [J].
Chen, JS ;
Lim, BC ;
Wang, JP .
JOURNAL OF APPLIED PHYSICS, 2003, 93 (10) :8167-8169
[4]   Towards a more analytic understanding of the pinning of domain walls in high-temperature permanent magnets [J].
Chui, ST .
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2000, 217 (1-3) :120-128
[5]   Control of the axis of chemical ordering and magnetic anisotropy in epitaxial FePt films [J].
Farrow, RFC ;
Weller, D ;
Marks, RF ;
Toney, MF ;
Cebollada, A ;
Harp, GR .
JOURNAL OF APPLIED PHYSICS, 1996, 79 (08) :5967-5969
[6]  
HSU CJ, 2006, IEEE T MAGN, V18, P7729
[7]   Dynamic stress-induced low-temperature ordering of FePt [J].
Lai, CH ;
Yang, CH ;
Chiang, CC ;
Balaji, T ;
Tseng, TK .
APPLIED PHYSICS LETTERS, 2004, 85 (19) :4430-4432
[8]   Reduction of ordering temperature of an FePt-ordered alloy by addition of Cu [J].
Maeda, T ;
Kai, T ;
Kikitsu, A ;
Nagase, T ;
Akiyama, J .
APPLIED PHYSICS LETTERS, 2002, 80 (12) :2147-2149
[9]   Chemical order induced by ion irradiation in FePt (001) films [J].
Ravelosona, D ;
Chappert, C ;
Mathet, V ;
Bernas, H .
APPLIED PHYSICS LETTERS, 2000, 76 (02) :236-238
[10]   Mechanism of stress relaxation in Ge nanocrystals embedded in SiO2 -: art. no. 063107 [J].
Sharp, ID ;
Yi, DO ;
Xu, Q ;
Liao, CY ;
Beeman, JW ;
Liliental-Weber, Z ;
Yu, KM ;
Zakharov, DN ;
Ager, JW ;
Chrzan, DC ;
Haller, EE .
APPLIED PHYSICS LETTERS, 2005, 86 (06) :1-3