Physics-Based Analytical Model for HCS Degradation in STI-LDMOS Transistors

被引：32
作者：
Reggiani, Susanna [1 ]
Poli, Stefano [1 ]
Denison, Marie [2 ]
Gnani, Elena [1 ]
Gnudi, Antonio [1 ]
Baccarani, Giorgio [1 ]
Pendharkar, Sameer [2 ]
Wise, Rick [2 ]
机构：
[1] Univ Bologna, Adv Res Ctr Elect Syst E De Castro, I-40126 Bologna, Italy
[2] Texas Instruments Inc, Dallas, TX 75243 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2011年 / 58卷 / 09期
关键词：
Analytical modeling; hot carrier; laterally diffused MOS (LDMOS); SERIES RESISTANCE; MOBILITY;
D O I：
10.1109/TED.2011.2160023
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A physics-based analytical model for the on-resistance in the linear transport regime and its application as an alternative tool for the investigation of the hot-carrier stress degradation in shallow-trench-isolation-based laterally diffused MOS devices are presented. The extraction of the model and its validation by comparison with experimental and TCAD data are reported. A thorough investigation of the degradation under low-and high-gate stress biases, corresponding to saturation and impact-ionization regimes, is carried out to gain an insight on the overall bias and temperature dependences of the parameter drifts.
引用
收藏
页码：3072 / 3080
页数：9
相关论文
共 22 条
[1]  
[Anonymous], SENT DEV SIM REL C 2
[2]   New Cost-Effective Integration Schemes Enabling Analog and High-Voltage Design in Advanced CMOS SOC Technologies [J].
Benaissa, K. ;
Baldwin, G. ;
Liu, S. ;
Srinivasan, P. ;
Hou, F. ;
Obradovic, B. ;
Yu, S. ;
Yang, H. ;
McMullan, R. ;
Reddy, V. ;
Chancellor, C. ;
Venkataraman, S. ;
Lu, H. ;
Dey, S. ;
Cirba, C. .
2010 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2010, :221-222
[3]   High voltage devices in advanced CMOS technologies [J].
Bianchi, R. A. ;
Raynaud, C. ;
Blanchet, F. ;
Monsieur, F. ;
Noblanc, O. .
PROCEEDINGS OF THE IEEE 2009 CUSTOM INTEGRATED CIRCUITS CONFERENCE, 2009, :363-369
[4]   On-resistance degradation induced by hot-carrier injection in LDMOS transistors with STI in the drift region [J].
Chen, Jone F. ;
Tian, Kuen-Shiuan ;
Chen, Shiang-Yu ;
Wu, Kuo-Ming ;
Liu, C. M. .
IEEE ELECTRON DEVICE LETTERS, 2008, 29 (09) :1071-1073
[5]   Convergence of Hot-Carrier-Induced Saturation Region Drain Current and On-Resistance Degradation in Drain Extended MOS Transistors [J].
Chen, Jone F. ;
Chen, Shiang-Yu ;
Wu, Kuo-Ming ;
Shih, J. R. ;
Wu, Kenneth .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (11) :2843-2847
[6]   An Investigation on Anomalous Hot-Carrier-Induced On-Resistance Reduction in n-Type LDMOS Transistors [J].
Chen, Jone F. ;
Tian, Kuen-Shiuan ;
Chen, Shiang-Yu ;
Wu, Kuo-Ming ;
Shih, J. R. ;
Wu, Kenneth .
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2009, 9 (03) :459-464
[7]   A RELIABLE APPROACH TO CHARGE-PUMPING MEASUREMENTS IN MOS-TRANSISTORS [J].
GROESENEKEN, G ;
MAES, HE ;
BELTRAN, N ;
DEKEERSMAECKER, RF .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (01) :42-53
[8]  
Hower P, 2005, INT SYM POW SEMICOND, P327
[9]   Mobility degradation due to interface traps in plasma oxynitride PMOS devices [J].
Islam, Ahmad Ehteshamul ;
Maheta, Vrajesh D. ;
Das, Hitesh ;
Mahapatra, Souvik ;
Alam, Muhammad Ashraful .
2008 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 46TH ANNUAL, 2008, :87-+
[10]  
JIANMENG, 2006, P INT C SOL STAT INT, P1327
123