Silicon nanowire memory application using hafnium oxide charge storage layer

被引：0
|
作者：
Zhu, Xiaoxiao [1 ,2 ]
Li, Qiliang [1 ,2 ]
Ioannou, Dimitris E. [1 ]
Kimes, William A. [3 ]
Suehle, John S. [2 ]
Maslar, James E. [3 ]
Xiong, Hao D. [2 ]
Yang, Shuo [1 ,2 ]
Richter, Curt A. [2 ]
机构：
[1] George Mason Univ, ECE Dept, Fairfax, VA 22030 USA
[2] NIST, Div Semicond Elect, Gaithersburg, MD 20899 USA
[3] NIST, Proc Measurment Div, Gaithersburg, MD 20899 USA
来源：
2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2 | 2007年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：514 / +
页数：2
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