High-Power InGaN-Based LED With Tunneling-Junction-Induced Two-Dimensional Electron Gas at AlGaN/GaN Heterostructure

被引：8

作者：

Lee, Jae-Hoon ^{[1
]}

Lee, Jung-Hee ^{[2
]}

机构：

[1] Samsung LED Co Ltd, GaN Power Res Grp, Suwon 443743, South Korea

[2] Kyungpook Natl Univ, Sch Elect Engn & Comp Sci, Taegu 702701, South Korea

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2011年 / 58卷 / 09期

关键词：

AlGaN/GaN; heterostructure; InGaN; light-emitting diode (LED); tunneling junction; 2-D electron gas (2-DEG); LIGHT-EMITTING-DIODES; LOW-OPERATION VOLTAGE; EXTRACTION EFFICIENCY; FABRICATION; IMPROVEMENT; PROTECTION; REDUCTION; GREEN;

D O I：

10.1109/TED.2011.2159119

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate high-performance InGaN-based light-emitting diodes (LEDs) with tunneling-junction-induced 2-D electron gas (2-DEG) at n-AlGaN/GaN heterostructure, inserted in the middle of the p(++)-GaN contact layer of a conventional LED structure. The LED with a 2-DEG layer exhibits about 20% enhancement in output power, as compared with that of the conventional LED at 350 mA, which is believed to be due to enhanced hole-injection efficiency and better lateral current spreading by the presence of 2-DEG at the AlGaN/GaN heterostructure.

引用

页码：3058 / 3064

页数：7

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