Effects of orientation and substrate on ion transport in fluoride heterostructures grown by molecular beam epitaxy

被引:20
作者
Guo, XX
Sata, N
Maier, J
机构
[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
[2] Tohoku Univ, Dept Machine Intelligence & Syst Engn, Sendai, Miyagi 9808579, Japan
关键词
molecular beam epitaxy; ion transport; CaF2/BaF2; heterostructures; orientation; substrate effects; space charges;
D O I
10.1016/j.electacta.2003.10.020
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Ion conductor heterostructures of BaF2 and CaF2 with various spacings have been prepared by molecular beam epitaxy (MBE) technique as reported previously by Sata et al. [Nature 408 (2000) 946]. In this paper, we are especially interested in the effects of orientation and substrate on the conductivity. Four kinds of substrates have been investigated (Al2O3(0 1 2), Al2O3(0 0 6), MgO(1 1 1), and MgO(1 1 0)), generating [1 1 1] and [1 0 0] oriented heterostructures with smooth surfaces. The samples have been investigated by ac impedance, dc polarization techniques, X-ray diffraction (XRD) and atomic force microscopy (AFM). The polarization measurements confirm that electronic effects are minor and the conductivity is ionic. The substrate itself causes a space charge effect which adds to the overall conductance as a constant contribution and is of the order of the effect of a single CaF2/BaF2 interface (or less), and hence totally negligible if the number of CaF2/BaF2 interfaces is high. Variation of the substrate's surface chemistry leads to a conductivity variation that is exactly opposite to the case of cation adsorption, and thus suggests F- adsorption as defect inducing mechanism at the Al2O3/BaF2 interface. The dominating contribution of the CaF2/BaF2 interfaces is approximately independent of the orientation, hence, favoring a fluoride ion transfer from one to the other phase rather than a charge accumulation at the interfacial core, in full agreement with the conclusions of Sata et al. [Nature 408 (2000) 946]. (C) 2003 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1091 / 1096
页数:6
相关论文
共 19 条
[1]  
[Anonymous], P 7 M INT COMM EL TH
[2]   POINT-DEFECT PARAMETERS FOR BETA-PBF2 FROM A COMPUTER-ANALYSIS OF MEASUREMENTS OF IONIC-CONDUCTIVITY [J].
AZIMI, A ;
CARR, VM ;
CHADWICK, AV ;
KIRKWOOD, FG ;
SAGHAFIAN, R .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1984, 45 (01) :23-31
[3]   CONCENTRATION AND MOBILITY OF INTERSTITIAL FLUORINE IONS IN CAF2 [J].
BOLLMANN, W ;
REIMANN, R .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 16 (01) :187-196
[4]   IONIC CONDUCTIVITY OF PURE AND DOPED BAF2 CRYSTALS [J].
BOLLMANN, W .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 18 (01) :313-321
[5]   ELECTRONIC CONDUCTIVITY IN SOLID CAF2 AT HIGH-TEMPERATURE [J].
DELCET, J ;
HEUS, RJ ;
EGAN, JJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (05) :755-758
[6]  
GRYAZNOV D, UNPUB
[7]  
GUO XC, IN PRESS SURF SCI
[8]  
Hagenmuller P., 1985, INORGANIC SOLID FLUO
[9]  
HAILE SM, UNPUB
[10]  
JINPHILLIPP NY, IN PRESS J CHEM PHYS