Transverse laser induced thermoelectric voltage effect in tilted La0.5Sr0.5CoO3 thin films

被引:23
作者
Wang, Y. [1 ]
Yu, L. [1 ,2 ]
Zhang, P. X. [1 ,2 ]
机构
[1] Kunming Univ Sci & Technol, Inst Adv Mat Photoelectrons, Kunming 650051, Peoples R China
[2] Max Planck Inst Solid State Res, D-70569 Stuttgart, Germany
关键词
Tilted La0.5Sr0.5CoO3 thin films; Laser induced thermoelectric voltage effect; Transverse Seebeck effect; STATE YBA2CU3O7-DELTA FILMS; DEVICES; SRTIO3;
D O I
10.1016/j.optlastec.2011.04.021
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The transverse laser induced thermoelectric voltage effect has been investigated in tilted La0.5Sr0.5CoO3 thin films grown on vicinal cut LaAlO3 (1 0 0) substrates when films are irradiated by pulse laser at room temperature. The detected voltage signals are demonstrated to originate from the transverse Seebeck effect as the linear dependence of voltage on tilted angle in the range of small tilted angle. The Seebeck coefficient anisotropy Delta S of 0.03 mu V/K at room temperature is calculated and its distorted cubic structure is thought to be responsible for this. Films grown on a series of substrates with different tilted angles show the optimum angle of 19.8 degrees for the maximum voltage. Film thickness dependence of voltage has also been studied. Crown Copyright (C) 2011 Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:1462 / 1465
页数:4
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