Application of ALD W films as gate filling metal in 22 nm HKMG-last integration: Evaluation and improvement of the adhesion in CMP process

被引：13

作者：

Xu, Qiang ^{[1
]}

Luo, Jun ^{[1
]}

Wang, Guilei ^{[1
]}

Yang, Tao ^{[1
]}

Li, Junfeng ^{[1
]}

Ye, Tianchun ^{[1
]}

Chen, Dapeng ^{[1
]}

Zhao, Chao ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China

来源：

MICROELECTRONIC ENGINEERING | 2015年 / 137卷

关键词：

ALD W; High k metal gate; Adhesion; CHEMICAL-VAPOR-DEPOSITION; TUNGSTEN;

D O I：

10.1016/j.mee.2015.01.007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Basic material properties and trench filling capability of different W films prepared by CVD and ALD (SiH4 and B2H6-based) are evaluated on blank and patterned wafers respectively in this work. As-prepared samples were characterized using four point probe measurement for sheet resistance (Rsh), X-ray diffraction (XRD) for phase identification, atomic force microscopy (AFM) for surface topography, top-view and cross-sectional scanning electron microscopy (SEM) for film morphology, and 4-point bending method for quantitative adhesion evaluation. By employing a short time pre-exposure of SiH4 prior to B2H6-based ALD W, the adhesion of as-prepared W is improved significantly, which meanwhile satisfies the requirements for trench filling in real small devices. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：43 / 46

页数：4