Interface resistance dependence of spin transport in a ferromagnet-semiconductor hybrid structure

被引：9

作者：

Koo, Hyun Cheol ^{[1
]}

Kwon, Jae Hyun ^{[1
]}

Eom, Jonghwa ^{[1
,2
]}

Chang, Joonyeon ^{[1
]}

Han, Suk-Hee ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Ctr Spintron Res, Seoul 136791, South Korea

[2] Sejong Univ, Inst Fundamental Phys, Dept Phys, Seoul 143747, South Korea

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2008年 / 320卷 / 08期

关键词：

spin transport; interface resistance; two-dimensional electron gas;

D O I：

10.1016/j.jmmm.2007.12.001

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The spin transport signals from NiFe and Co into two-dimensional electron gas layers are measured for various thicknesses of transmission barriers. A stable and reproducible electrical detection of spin transport was obtained only when the barrier thickness is less than 10 nm. The typical interface resistance to observe spin signals in this experiment is about 0.5 - 250 Omega, which is a neither transparent nor a severe tunneling limit. The optimal interface resistance depends on the ferromagnetic materials, but severe tunneling barrier is not proper for fully electrical spin transport. Device size is also a critical factor to decide the proper range of interface resistance. (c) 2007 Published by Elsevier B.V.

引用

页码：1436 / 1439

页数：4

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