A simple curvature-compensated technique for CMOS bandgap voltage reference

被引：1
|
作者：
Wu, Jin [1 ]
Qu, Ning [1 ]
Nie, Weidong [2 ]
Li, Hao [1 ]
机构：
[1] Southeast Univ, Wuxi, Peoples R China
[2] Jiangnan Univ, Sch Informat, Wuxi, Peoples R China
来源：
IEICE ELECTRONICS EXPRESS | 2011年 / 8卷 / 17期
关键词：
bandgap voltage reference; nonlinear compensation; temperature coefficient; mismatch current;
D O I：
10.1587/elex.8.1374
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A simple high-order curvature-compensated technique for CMOS bandgap voltage reference (BVR) is presented and its advantage over the conventional ones is that this technique needs no extra circuitry for curvature compensation. The experimental prototype circuit is fabricated in CSMC 0.18 mu m CMOS process and occupies an area of 0.053 mm(2). A temperature coefficient (TC) of 10.1 ppm/degrees C is achieved with temperature ranging from -40 degrees C to 120 degrees C under 3 V power supply. The line regulation of the output reference is only 0.85 mV/V.
引用
收藏
页码：1374 / 1379
页数：6
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