Characterizations of NbAlO thin films grown by atomic layer deposition

被引：6
|
作者：
Liu, Jianshuang [1 ]
Xu, Yan [1 ]
Sun, Qingqing [1 ]
Lu, Hongliang [1 ]
Zhang, David Wei [1 ]
机构：
[1] Fudan Univ, State Key Lab ASIC & Syst, Dept Microelect, Shanghai 200433, Peoples R China
来源：
MATERIALS LETTERS | 2011年 / 65卷 / 14期
关键词：
Thin films; Dielectrics; Atomic layer deposition; XPS; NB2O5; CHEMISTRY;
D O I：
10.1016/j.matlet.2011.04.067
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Niobium-aluminate (NbAlO) thin films have been prepared on silicon (100) with different Nb(2)O(5):Al(2)O(3) growth cycle ratio by atomic layer deposition (ALD) technology. The structural, chemical and optical properties of NbAlO thin films are investigated using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and spectroscopic ellipsometry (SE). The results show that all the obtained NbAlO films are amorphous and fully oxidized. It is also found that the proportion of components in the NbAlO film can be well-controlled by varying the ALD growth cycles of the independent oxides. Furthermore, the refraction index of the prepared films is observed to increase with an increase of the concentration of Nb in the mixtures. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：2182 / 2184
页数：3
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