Fast-Response MoS2-Based Humidity Sensor Braced by SiO2 Microsphere Layers

被引：27

作者：

Li, Ning ^{[1
]}

Chen, Xiang-Dong ^{[1
]}

Chen, Xin-Peng ^{[1
]}

Ding, Xing ^{[1
]}

Zhao, Xuan ^{[1
]}

机构：

[1] Southwest Jiaotong Univ, Sch Informat Sci & Technol, Chengdu 610031, Sichuan, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2018年 / 39卷 / 01期

基金：

中国国家自然科学基金;

关键词：

MoS2; SiO2; microsphere; humidity sensor; fast response; ACTIVE EDGE SITES; MOS2; NANOCOMPOSITE; EVOLUTION;

D O I：

10.1109/LED.2017.2778187

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, a MoS2-based humidity sensor braced by SiO2 microsphere layers with rapid response was developed. The results demonstrated that the humidity sensor can exhibit a subsecond response. A mechanism based on the morphology and structure of the sensing film was proposed to explain the rapid response behavior of humidity sensors. In addition, the effect of film thickness on response time was discussed. This letter demonstrated that the MoS2-based humidity sensor braced by SiO2 microspheres is suitable for the miniature drip infusion rate detection device.

引用

页码：115 / 118

页数：4

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