Electrical and mechanical properties of Au-Si bonds for 3D interconnect applications

被引:0
作者
Liang, Hengmao [1 ]
Xiong, Bin [2 ]
机构
[1] South China Agr Univ, Coll Artificial Intelligence, Coll Elect Engn, 483 Wushan Rd, Guangzhou 510642, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Sci & Technol Microsyst Lab, 865 Changning Rd, Shanghai 200050, Peoples R China
关键词
Au-Si bonding; 3D interconnection; specific contact resistance; bonding strength; bonding area; bonding pattern shape; CONTACT RESISTIVITY; WAFER; INTEGRATION; SILICON; STRESS;
D O I
10.1088/1361-6641/ac117a
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Driven by high-density and high-reliability demands on three-dimensional (3D) interconnections, electrical and mechanical properties of interconnection structures have been paid more attention. Aiming at the novel enable-3D interconnections realized by Au-Si wafer bonding, this study demonstrates the design, fabrication and test results of testing structures for dimension-define parameters of Au-Si bonds. In order to measure closely-realistic ohmic contact resistances of Au-Si bonds after wafer bonding processes implemented under certain bonding pressures and temperatures, the convex Si structures formed by the local oxidation of silicon process have been designed. Therefrom the specific contact resistance values of Au-Si bonds have been measured as 3.9-8.1 x 10(-10)omega m(2) for different contact radii (3-20 mu m), which indicates the low-resistance potentiality for Au-Si bonds applied on 3D interconnections. On the other hand, two findings on bonding strengths are summarized from finite element simulations and tensile experiments: (a) Au-Si bonding strengths of circular bonding patterns (35-75 MPa) are superior to the ones of square bonding patterns (18-30 MPa) due to the stress concentration phenomenon on four corners of square bonding patterns; (b) there is an inverse relationship between bonding strengths and bonding areas owing to uneven stress distributions in bonding structures. Overall, this study provides a basic optimization design strategy at electrical and mechanical levels for 3D interconnections actualized by Au-Si bonding. Incidentally, these introduced analysis methods are also feasible for homologous Si-based eutectic bonding techniques to extend the forms of 3D interconnections.
引用
收藏
页数:10
相关论文
共 22 条
[21]   Heterogeneous Integration of Thin-Film Optical Devices Utilizing Fluidic Self-Assembly and Micro-Pick-and-Place Technique [J].
Xiao, Jing ;
Chaudhuri, Ritesh Ray ;
Seo, Sang-Woo .
IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY, 2016, 6 (08) :1283-1289
[22]   Effects of the Thermocompression Bonding on the Microstructure and Contact Resistance for the Ultrafine Pitch Chip-on-Glass Packaging With Nonconductive Film [J].
Zhang, Jianhua ;
Zhang, Jinsong ;
Yang, Lianqiao .
JOURNAL OF ELECTRONIC PACKAGING, 2010, 132 (04)