Investigation of deep-level defects in semi-insulating GaAs and InP by analysis of photo-induced current transients

被引：4

作者：

Kaminski, P ^{[1
]}

Pawlowski, M ^{[1
]}

Cwirko, R ^{[1
]}

Palczewska, M ^{[1
]}

Kozlowski, R ^{[1
]}

机构：

[1] MIL UNIV TECHNOL,PL-01489 WARSAW,POLAND

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1996年 / 42卷 / 1-3期

关键词：

electron spin resonance; deep level transient spectroscopy; photoinduced current;

D O I：

10.1016/S0921-5107(96)01709-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A new digital approach to PICTS technique was applied to study deep levels in undoped SI GaAs and Fe-doped InP. For SI Fe-doped InP, the 0.64-eV trap related to Fe2+/Fe3+ acceptor level as well as the 0.53-eV trap attributed to a native defect, were observed. For SI undoped GaAs, three traps: T1 (0.58 eV), T2 (0.66 eV) and T3 (0.73 eV) assigned to the known centers EL3, HL9, and EL2, respectively, were resolved. The studies were completed by the electron spin resonance (ESR) measurements.

引用

页码：213 / 216

页数：4

共 9 条

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