Primary defects in n-type irradiated germanium: A first-principles investigation

被引：2

作者：

Carvalho, A. ^{[1
]}

Jones, R. ^{[1
]}

Janke, C. ^{[1
]}

Oberg, S. ^{[2
]}

Briddon, P. R. ^{[3
]}

机构：

[1] Univ Exeter, Sch Phys, Exeter EX4 4QL, Devon, England

[2] Univ Lulea, Dept Math, S-97187 Lulea, Sweden

[3] Newcastle Univ, Sch Nat Sci, Newcastle Upon Tyne, Tyne & Wear NE1 7RU, England

来源：

GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XII | 2008年 / 131-133卷

关键词：

germanium; interstitial; vacancy; radiation; Frenkel pairs;

D O I：

10.4028/www.scientific.net/SSP.131-133.253

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The properties of point defects introduced by low temperature electron irradiation of germanium are investigated by first-principles modeling. Close Frenkel pairs, including the metastable fourfold coordinated defect, are modelled and their stability is discussed. It is found that damage evolution upon annealing below room temperature can be consistently explained with the formation of correlated interstitial-vacancy pairs if the charge-dependent properties of the vacancy and self-interstitial are taken into account. We propose that Frenkel pairs can trap up to two electrons and are responsible for conductivity loss in n-type Ge at low temperatures.

引用

页码：253 / +

页数：2

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