Enhanced Second-Harmonic Generation in Broken Symmetry III-V Semiconductor Metasurfaces driven by Fano resonance

被引：0
|
作者：
Vabishchevich, Polina P. [1 ,2 ]
Liu, Sheng [1 ,2 ]
Sinclair, Michael B. [1 ]
Keeler, Gordon A. [1 ]
Peake, Gregory M. [1 ]
Brener, Igal [1 ,2 ]
机构：
[1] Sandia Natl Labs, Albuquerque, NM 87185 USA
[2] Sandia Natl Labs, Ctr Integrated Nanotechnol, Albuquerque, NM 87185 USA
来源：
2018 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2018年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We use broken symmetry III-V semiconductor Fano metasurfaces to substantially improve the efficiency of second-harmonic generation (SHG) in the near infrared, compared to SHG obtained from metasurfaces created using symmetrical Mie resonators.
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页数：2
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