A study of inner process double-resonance Raman scattering in bilayer graphene

被引：27

作者：

Mafra, D. L. ^{[1
]}

Moujaes, E. A. ^{[1
]}

Doorn, S. K. ^{[2
]}

Htoon, H. ^{[2
]}

Nunes, R. W. ^{[1
]}

Pimenta, M. A. ^{[1
]}

机构：

[1] Univ Fed Minas Gerais, Dept Fis, BR-30123970 Belo Horizonte, MG, Brazil

[2] Los Alamos Natl Lab, Div Chem, Los Alamos, NM 87545 USA

来源：

CARBON | 2011年 / 49卷 / 05期

关键词：

BAND-STRUCTURE; GRAPHITE; SPECTROSCOPY; STRAIN;

D O I：

10.1016/j.carbon.2010.11.053

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The dispersion of phonons and the electronic structure of graphene systems can be obtained experimentally from the double-resonance (DR) Raman features by varying the excitation laser energy. In a previous resonance Raman investigation of graphene, the electronic structure was analyzed in the framework of the Slonczewski-Weiss-McClure (SWM) model, considering the outer DR process. We analyze the data considering the inner DR process, and obtain SWM parameters that are in better agreement with those obtained from other experimental techniques. (C) 2010 Elsevier Ltd. All rights reserved.

引用

页码：1511 / 1515

页数：5

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