Adhesion mechanism at metal-organic interface modified by plasma

被引:1
|
作者
Sun, YB [1 ]
机构
[1] Kyonggi Univ, Grad Sch Ind Technol & Informat, Suwon 442760, Kyonggi Do, South Korea
关键词
mold sticking; surface modification; adhesion mechanism;
D O I
10.2320/matertrans.44.1636
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Mold die sticking has been thought to be caused by the increase in die surface roughness and surface area due to silica filler abrasion. In-situ results of semiconductor manufacturers showed a strong dependency on the make of EMC (epoxy molding compound); indicating chemical interaction was apt to be also functioning as a major mechanism. PSII (plasma source ion implantation) using O-2, N-2, and CF4 was applied to modify sample surface condition from hydrophilic to hydrophobic and vice versa. By comparing surface energy quantified by contact angle and surface ion coupling state analyzed by Auger with pull-out strength, the governing mechanism for the sticking issue was determined to be a result of complex of mechanical and chemical factors.
引用
收藏
页码:1636 / 1639
页数:4
相关论文
共 50 条
  • [1] Improved Performance of Organic LEDs with Modified Metal-Organic Interface
    Srivastava, Ritu
    Rana, Omwati
    Ahmad, Razi
    Suman, C. K.
    Zulfequar, M.
    Husain, M.
    Kamalasanan, M. N.
    INTERNATIONAL CONFERENCE ON MATERIALS SCIENCE AND TECHNOLOGY (ICMST 2012), 2015, 73
  • [2] Bonding at the metal-organic interface
    Zurek, Eva
    Hooper, James
    Simpson, Scott
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2014, 247
  • [3] Shaping of metal-organic frameworks at the interface
    Wang, Jierui
    Zhu, He
    Zhu, Shiping
    CHEMICAL ENGINEERING JOURNAL, 2023, 466
  • [4] Charge Transport at the Metal-Organic Interface
    Chen, Shaowei
    Zhao, Zhenhuan
    Liu, Hong
    ANNUAL REVIEW OF PHYSICAL CHEMISTRY, VOL 64, 2013, 64 : 221 - 245
  • [5] Modified metal-organic frameworks as photocatalysts
    Qiu, Jianhao
    Zhang, Xingguang
    Feng, Yi
    Zhang, Xiongfei
    Wang, Huanting
    Yao, Jianfeng
    APPLIED CATALYSIS B-ENVIRONMENTAL, 2018, 231 : 317 - 342
  • [6] Energetic disorder at the metal-organic semiconductor interface
    Novikov, SV
    Malliaras, GG
    PHYSICAL REVIEW B, 2006, 73 (03):
  • [7] Interface dipole at metal-organic interfaces: Contribution of metal induced interface states
    Lee, C. S.
    Tang, J. X.
    Zhou, Y. C.
    Lee, S. T.
    APPLIED PHYSICS LETTERS, 2009, 94 (11)
  • [8] Electron transport across a metal-organic interface
    Stokbro, Kurt
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2014, 247
  • [9] Charge injection and recombination at the metal-organic interface
    Scott, JC
    Malliaras, GG
    CHEMICAL PHYSICS LETTERS, 1999, 299 (02) : 115 - 119
  • [10] Thermodynamic equilibrium and metal-organic interface dipole
    Yan, L
    Watkins, NJ
    Zorba, S
    Gao, YL
    Tang, CW
    APPLIED PHYSICS LETTERS, 2002, 81 (15) : 2752 - 2754