Perovskite light-emitting devices with a metal-insulator-semiconductor structure and carrier tunnelling

被引：25

作者：

Li, Jing ^{[1
]}

Yu, Qianqian ^{[1
]}

Gan, Lu ^{[1
]}

Chen, Diyan ^{[1
]}

Lu, Bin ^{[1
]}

Ye, Zhizhen ^{[1
]}

He, Haiping ^{[1
]}

机构：

[1] Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

来源：

JOURNAL OF MATERIALS CHEMISTRY C | 2017年 / 5卷 / 31期

关键词：

HALIDE PEROVSKITES; SOLAR-CELLS; DIODES; PHOTOLUMINESCENCE; EFFICIENCY; EMISSION; LAYER; FILMS;

D O I：

10.1039/c7tc01809f

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Organic-inorganic hybrid perovskites have been widely recognized as highly luminescent materials for efficient light-emitting devices. Herein, we report a simple perovskite-based metal-insulator-semiconductor (MIS) device structure with green light emission. Electron tunnelling and subsequent recombination in the semi-conductor-insulator interface region is confirmed as the working mechanism of the perovskite light-emitting devices.

引用

页码：7715 / 7719

页数：5

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