Thermal process and surface damage of GaAs induced by 532 nm continuous laser

被引：10

作者：

Qi, Haifeng ^{[1
]}

Wang, Qingpu ^{[1
]}

Li, Yongfu ^{[1
]}

Zhang, Xingyu ^{[1
]}

Liu, Zejin ^{[2
]}

Wang, Yurong ^{[1
]}

Zhang, Sasa ^{[1
]}

Xia, Wei ^{[1
]}

Jin, Guofan ^{[1
]}

机构：

[1] Shandong Univ, Sch Informat Sci & Engn, Jinan 250100, Peoples R China

[2] Natl Def Univ Technol, Inst Optoelect, Changsha 410073, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2007年 / 254卷 / 05期

基金：

中国国家自然科学基金;

关键词：

laser induced damage (LID); gallium arsenide (GaAs); thermal damage; thermal process; continuous laser;

D O I：

10.1016/j.apsusc.2007.06.051

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The thermal damage process of gallium arsenide (GaAs) induced by 532 nm continuous laser is presented in this work. The surface damage in the form of decomposing was detected and determined previous to the melting damage by the real-time observation of surface reflectivity. The evaporation of As induced the decrease of As content in the irradiated surface. The microscopic morphology and composition analysis of the damaged surfaces at different moments during the whole thermal process were performed with an electron probe microscope. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：1373 / 1376

页数：4

共 8 条

[1] Thermal mechanisms in laser ablation of GaAs
Craciun, V
Craciun, D
[J]. APPLIED SURFACE SCIENCE, 1997, 109 : 312 - 316
[2] Laser-induced damage studies in GaAs
Garg, A
Kapoor, A
Tripathi, KN
[J]. OPTICS AND LASER TECHNOLOGY, 2003, 35 (01) : 21 - 24
[3] Laser induced damage in GaAs at 1.06 mu m wavelength: Surface effects
Kuanr, AV
Bansal, SK
Srivastava, GP
[J]. OPTICS AND LASER TECHNOLOGY, 1996, 28 (01) : 25 - 34
[4] SURFACE DAMAGE OF GAAS FROM 0.694-MU AND 1.06-MU LASER RADIATION
SMITH, JL
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (08) : 3399 - &
[5] EXCIMER LASER MELTING OF GAAS - REAL-TIME OPTICAL STUDY
SOLIS, J
AFONSO, CN
PIQUERAS, J
[J]. JOURNAL OF APPLIED PHYSICS, 1992, 71 (02) : 1032 - 1034
[6] LASER-INDUCED RECRYSTALLIZATION AND DAMAGE IN GAAS
TSU, R
BAGLIN, JE
LASHER, GJ
TSANG, JC
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (02) : 153 - 155
[7] Laser-solid interaction in the femtosecond time regime
vonderLinde, D
SokolowskiTinten, K
Bialkowski, J
[J]. APPLIED SURFACE SCIENCE, 1997, 109 : 1 - 10
[8] Damage threshold of HgCdTe induced by continuous-wave CO2 laser
Zhao, JH
Li, XY
Liu, H
Jiang, RQ
Liu, ZP
Hu, ZH
Gong, HM
Fang, JX
[J]. APPLIED PHYSICS LETTERS, 1999, 74 (08) : 1081 - 1083

← 1 →