Optimization of novel hybrid absorption layer for high performance p-i-n micro photodetector

Here we report a new design for enlargement of the detection limit of a convention near infrared InGaAs/InP photodetector to short wavelength infrared. In the new device configurations, we used GaAs0.51Sb0.49 as the player instead of InP layer because of its superiority in the hole lifetime. Also, by introducing different thickness of the GaAs Sb in the absorption layer beside InGaAs, we engineered the electron and hole concentration in their corresponding interfaces of the absorption layer as well as the y component of the electric field to reach higher responsivity. The successful optimization of hybrid absorption layer photodetector with short wavelength infrared detection may accelerate the development of high -performance micro devices based on such configurations.