共 27 条
Growth and optical study of ZnO nanorods
被引:9
作者:

Chandrinou, C.
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h-index: 0
机构: Demokritos Natl Ctr Sci Res, Inst Sci Mat, Athens 15310, Greece

Boukos, N.
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h-index: 0
机构:
Demokritos Natl Ctr Sci Res, Inst Sci Mat, Athens 15310, Greece Demokritos Natl Ctr Sci Res, Inst Sci Mat, Athens 15310, Greece

Giannakopoulos, K.
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h-index: 0
机构: Demokritos Natl Ctr Sci Res, Inst Sci Mat, Athens 15310, Greece

Lusson, A.
论文数: 0 引用数: 0
h-index: 0
机构: Demokritos Natl Ctr Sci Res, Inst Sci Mat, Athens 15310, Greece

Travlos, A.
论文数: 0 引用数: 0
h-index: 0
机构: Demokritos Natl Ctr Sci Res, Inst Sci Mat, Athens 15310, Greece
机构:
[1] Demokritos Natl Ctr Sci Res, Inst Sci Mat, Athens 15310, Greece
[2] Univ Versailles, CNRS, Grp Etude Mat Condense, F-92190 Meudon, France
关键词:
ZnO;
nanorods;
TEM;
PL;
D O I:
10.1016/j.spmi.2007.04.074
中图分类号:
O469 [凝聚态物理学];
学科分类号:
070205 ;
摘要:
ZnO nanorods were grown by a simple near room temperature, chemical solution method on ZnO-seeded silicon substrates. Study of the ZnO nanorods over different growth times by electron microscopy methods revealed that the resulting ZnO nanorods were single crystalline with a highly preferential growth perpendicular to the substrate and a very good c-axis alignment. The size of the nanorods increased with increasing growth time. The growth mechanism is briefly discussed. Post-annealing in oxygen slightly improved the surface roughness of the ZnO nanorods. Photoluminescence experiments at 1.6 K revealed a major emission peak of the nanorods at around 3.36 eV which is attributed to the band edge transition of ZnO, while defect-related emission is relatively weak. (c) 2007 Elsevier Ltd. All rights reserved.
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页码:431 / 437
页数:7
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