High-performance ZnO Thin-Film Transistors Prepared by Atomic Layer Deposition at Low Temperature

被引：0

作者：

Li, Qi ^{[1
]}

Dong, Junchen ^{[1
]}

Han, Dedong ^{[1
]}

Zhang, Xing ^{[1
]}

Wang, Yi ^{[1
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

来源：

2021 5TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM) | 2021年

基金：

中国国家自然科学基金;

关键词：

ZnO TFTs; low process temperature and high mobility; OXIDE; ALD;

D O I：

10.1109/EDTM50988.2021.9420992

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-performance ZnO thin film transistors (TFTs) are fabricated by atomic layer deposition (ALD). The effects of the deposition temperature of ZnO active layer (80, 100, 120, and 140 degrees C) on performance of TFTs are investigated. Devices with ZnO active layer deposited at 120 degrees C exhibit the best performance, such as a field-effect mobility of 31.79 cm(2)V(-1)s(-1), a sub-threshold slope of 181 mV/decade, an on/off state current ratio over 10(9). Besides, the devices show -0.22 and 0.19 V threshold voltage shift under positive and negative gate-bias stress.

引用

页数：3

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