On-state characteristics of SiC power UMOSFETs on 115-μm drift layers

被引：68

作者：

Sui, Y ^{[1
]}

Tsuji, T

Cooper, JA

机构：

[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

[2] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2005年 / 26卷 / 04期

关键词：

high voltage; power transistors; silicon carbide; wide bandgap;

D O I：

10.1109/LED.2005.845495

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe the on-state performance of trench oxide-protected SiC UMOSFETs on 115-mu m-thick n-type 4H-SiC epilayers designed for blocking voltages up to 14 kV. An on-state current density of 137 A/cm(2) and specific on-resistance of 228 m Omega (.) cm 2 are achieved at a gate bias of 40 V (oxide field of 2.67 MV/cm). The effect of current spreading on the specific on-resistance for finite-dimension devices is investigated, and appropriate corrections are made.

引用

页码：255 / 257

页数：3

共 11 条

[1]

Agarwal A, 2004, ADV TEXTS PHYS, P785

[2]

Cooper JA., 2001, US Patent, Patent No. 6180958

[3]

KHAN I, 2002, THESIS PURDUE U W LA

[4]

KHAN I, 2002, INT S POW SEM DEV IC

[5]

KHAN I, 2002, EL MAT C SANT BARB C

[6] Electron mobility models for 4H, 6H, and 3C SiC [J].

Roschke, M ;

Schwierz, F .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (07) :1442-1447

[7] Development of 10 kV 4H-SiC power DMOSFETs [J].

Ryu, SH ;

Agarwal, A ;

Krishnaswami, S ;

Richmond, J ;

Palmour, J .

SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 2004, 457-460 :1385-1388

[8]

STEPHANI D, 2003, INT C SIL CARB REL M

[9] High-voltage accumulation-layer UMOSFET's in 4H-SiC [J].

Tan, J ;

Cooper, JA ;

Melloch, MR .

IEEE ELECTRON DEVICE LETTERS, 1998, 19 (12) :487-489

[10] INCREASED AVALANCHE BREAKDOWN VOLTAGE AND CONTROLLED SURFACE ELECTRIC-FIELDS USING A JUNCTION TERMINATION EXTENSION (JTE) TECHNIQUE [J].

TEMPLE, VAK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (08) :954-957

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