Flexible Ionic-Electronic Hybrid Oxide Synaptic TFTs with Programmable Dynamic Plasticity for Brain-Inspired Neuromorphic Computing

被引:167
作者
John, Rohit Abraham [1 ]
Ko, Jieun [2 ]
Kulkarni, Mohit R. [1 ]
Tiwari, Naveen [1 ]
Nguyen Anh Chien [1 ]
Ing, Ng Geok [2 ]
Leong, Wei Lin [2 ,3 ]
Mathews, Nripan [1 ,4 ]
机构
[1] Nanyang Technol Univ, Sch Mat Sci & Engn, 50 Nanyang Ave, Singapore 639798, Singapore
[2] Nanyang Technol Univ, Sch Elect & Elect Engn, 50 Nanyang Ave, Singapore 639798, Singapore
[3] Nanyang Technol Univ, Sch Chem & Biomed Engn, 50 Nanyang Dr, Singapore 637459, Singapore
[4] Nanyang Technol Univ, Energy Res Inst NTU ERI N, Singapore 637553, Singapore
关键词
FIELD-EFFECT TRANSISTORS; TEMPERATURE FABRICATION; GATE INSULATOR; SOL-GEL; LIQUID; DEVICES; MODULATION; SYNAPSES;
D O I
10.1002/smll.201701193
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Emulation of biological synapses is necessary for future brain-inspired neuromorphic computational systems that could look beyond the standard von Neuman architecture. Here, artificial synapses based on ionic-electronic hybrid oxide-based transistors on rigid and flexible substrates are demonstrated. The flexible transistors reported here depict a high field-effect mobility of approximate to 9 cm(2) V-1 s(-1) with good mechanical performance. Comprehensive learning abilities/synaptic rules like paired-pulse facilitation, excitatory and inhibitory postsynaptic currents, spike-time-dependent plasticity, consolidation, superlinear amplification, and dynamic logic are successfully established depicting concurrent processing and memory functionalities with spatiotemporal correlation. The results present a fully solution processable approach to fabricate artificial synapses for next-generation transparent neural circuits.
引用
收藏
页数:12
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