Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode

被引：40
作者：
Jung, Byung Oh [1 ,3 ]
Bae, Si-Young [1 ,2 ]
Lee, Seunga [1 ,3 ]
Kim, Sang Yun [4 ,5 ]
Lee, Jeong Yong [4 ,5 ]
Honda, Yoshio [1 ,2 ]
Amano, Hiroshi [1 ,2 ]
机构：
[1] Nagoya Univ, ARC, Nagoya, Aichi 4648603, Japan
[2] Nagoya Univ, IMaSS, CIRFE, Nagoya, Aichi 4648603, Japan
[3] Nagoya Univ, Dept Elect Engn & Comp Sci, Nagoya, Aichi 4648603, Japan
[4] Inst for Basic Sci Korea, Ctr Nanomat & Chem React, Taejon 305701, South Korea
[5] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
来源：
NANOSCALE RESEARCH LETTERS | 2016年 / 11卷
基金：
日本学术振兴会;
关键词：
Gallium nitride; Nanorod; Core-shell structure; Light-emitting diodes; MULTIPLE-QUANTUM WELLS; TEMPERATURE-DEPENDENCE; GAN NANOWIRES; GROWTH; PHOTOLUMINESCENCE; SUBSTRATE; ARRAYS;
D O I：
10.1186/s11671-016-1441-6
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We report the selective-area growth of a gallium nitride (GaN)-nanorod-based InGaN/GaN multiple-quantum-well (MQW) core-shell structure embedded in a three-dimensional (3D) light-emitting diode (LED) grown by metalorganic chemical vapor deposition (MOCVD) and its optical analysis. High-resolution transmission electron microscopy (HR-TEM) observation revealed the high quality of the GaN nanorods and the position dependence of the structural properties of the InGaN/GaN MQWs on multiple facets. The excitation and temperature dependences of photoluminescence (PL) revealed the m-plane emission behaviors of the InGaN/GaN core-shell nanorods. The electroluminescence (EL) of the InGaN/GaN core-shell-nanorod-embedded 3D LED changed color from green to blue with increasing injection current. This phenomenon was mainly due to the energy gradient and deep localization of the indium in the selectively grown InGaN/GaN core-shell MQWs on the 3D architecture.
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页数：10
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