Cobalt oxide thin films prepared by NSP technique: Impact of molar concentration on the structural, optical, morphological and electrical properties
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作者:
Manickam, M.
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Sri Ramakrishna Mission Vidyalaya Coll Arts & Sci, Dept Phys, Coimbatore 641020, Tamil Nadu, IndiaSri Ramakrishna Mission Vidyalaya Coll Arts & Sci, Dept Phys, Coimbatore 641020, Tamil Nadu, India
Manickam, M.
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Ponnuswamy, V.
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Sri Ramakrishna Mission Vidyalaya Coll Arts & Sci, Dept Phys, Coimbatore 641020, Tamil Nadu, IndiaSri Ramakrishna Mission Vidyalaya Coll Arts & Sci, Dept Phys, Coimbatore 641020, Tamil Nadu, India
Ponnuswamy, V.
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Sankar, C.
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Sri Ramakrishna Mission Vidyalaya Coll Arts & Sci, Dept Phys, Coimbatore 641020, Tamil Nadu, IndiaSri Ramakrishna Mission Vidyalaya Coll Arts & Sci, Dept Phys, Coimbatore 641020, Tamil Nadu, India
Sankar, C.
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Suresh, R.
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Sri Ramakrishna Mission Vidyalaya Coll Arts & Sci, Dept Phys, Coimbatore 641020, Tamil Nadu, IndiaSri Ramakrishna Mission Vidyalaya Coll Arts & Sci, Dept Phys, Coimbatore 641020, Tamil Nadu, India
Suresh, R.
[1
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[1] Sri Ramakrishna Mission Vidyalaya Coll Arts & Sci, Dept Phys, Coimbatore 641020, Tamil Nadu, India
Cubic cobalt oxide (Co3O4) thin films are deposited using cobalt chloride hexahydrate as precursor by nebulizer spray pyrolysis technique with different molar concentrations. The structural, optical, morphological and electrical properties are investigated. X-ray diffraction (XRD) analysis shows the polycrystalline nature of the films with cubic structure having preferential orientation through (220) plane. The maximum crystallite size is found to be similar to 21 nm. The optical bandgap energy of the film is decreased with the increase of molar concentration. The obtained maximum bandgap energy values are 2.88 and 1.56 eV for the films prepared at 0.025 M. High-resolution scanning electron microscope illustrates the overgrown crystals like structure and coalescence of grains. The electrical conductivity of the films increases with the increase of molar concentration. (C) 2016 Elsevier GmbH. All rights reserved.
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Ajou Univ, Dept Chem Engn, Suwon 443749, South Korea
Ajou Univ, Div Energy Syst Res, Suwon 443749, South KoreaShivaji Univ, Dept Phys, Thin Film Phys Lab, Kolhapur 416004, MS, India
Kandalkar, S. G.
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Dhawale, D. S.
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Shivaji Univ, Dept Phys, Thin Film Phys Lab, Kolhapur 416004, MS, IndiaShivaji Univ, Dept Phys, Thin Film Phys Lab, Kolhapur 416004, MS, India
Dhawale, D. S.
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Kim, Chang-Koo
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Lokhande, C. D.
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Shivaji Univ, Dept Phys, Thin Film Phys Lab, Kolhapur 416004, MS, IndiaShivaji Univ, Dept Phys, Thin Film Phys Lab, Kolhapur 416004, MS, India
机构:
Ajou Univ, Dept Chem Engn, Suwon 443749, South Korea
Ajou Univ, Div Energy Syst Res, Suwon 443749, South KoreaShivaji Univ, Dept Phys, Thin Film Phys Lab, Kolhapur 416004, MS, India
Kandalkar, S. G.
;
Dhawale, D. S.
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Shivaji Univ, Dept Phys, Thin Film Phys Lab, Kolhapur 416004, MS, IndiaShivaji Univ, Dept Phys, Thin Film Phys Lab, Kolhapur 416004, MS, India
Dhawale, D. S.
;
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Kim, Chang-Koo
;
Lokhande, C. D.
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Shivaji Univ, Dept Phys, Thin Film Phys Lab, Kolhapur 416004, MS, IndiaShivaji Univ, Dept Phys, Thin Film Phys Lab, Kolhapur 416004, MS, India