Resistance and Threshold Switching Voltage Drift Behavior in Phase-Change Memory and Their Temperature Dependence at Microsecond Time Scales Studied Using a Micro-Thermal Stage

被引：54

作者：

Kim, SangBum ^{[1
]}

Lee, Byoungil ^{[2
]}

Asheghi, Mehdi ^{[2
]}

Hurkx, Fred ^{[3
]}

Reifenberg, John P. ^{[4
]}

Goodson, Kenneth E. ^{[2
]}

Wong, H. -S. Philip ^{[2
]}

机构：

[1] IBM TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

[2] Stanford Univ, Stanford, CA 94305 USA

[3] NXP TSMC Res Ctr, B-3001 Louvain, Belgium

[4] Intel Corp, Santa Clara, CA 95054 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2011年 / 58卷 / 03期

基金：

美国国家科学基金会;

关键词：

Nonvolatile memory; phase-change memory (PCM); resistance drift; threshold switching;

D O I：

10.1109/TED.2010.2095502

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We study the drift behavior of RESET resistance RRESET and threshold switching voltage Vth in phase-change memory (PCM) and their temperature dependence. To extend the temperature-dependent measurement to microsecond time scales, we integrate an innovative micro-thermal stage (MTS) on the PCM cell. The MTS changes the temperature of the programmed region of the PCM cell within a few microseconds by placing the Pt heater in close proximity of the programmed region. First, we experimentally verify the existing phenomenologicalRRESET and Vth drift model for constant annealing temperature at various temperatures between 25 degrees C and 185 degrees C down to 100 mu s and show that the measured temperature dependence of the drift coefficient agrees well with what is expected from the existing drift models. Based on the existing drift model for a constant annealing temperature, we derive the analytical expression for the R-RESET drift for time-varying annealing temperature and experimentally verify the analytical expression. The derived analytical expression is important to understand the impact of thermal disturbance on PCM reliability such as variations in R-RESET and V-th.

引用

页码：584 / 592

页数：9