Si L-emission band of CrSi2

被引：8

作者：

Simunek, A ^{[1
]}

Wiech, G ^{[1
]}

机构：

[1] UNIV MUNICH,SEKT PHYS,D-80539 MUNICH,GERMANY

来源：

SOLID STATE COMMUNICATIONS | 1996年 / 98卷 / 05期

关键词：

semiconductors; electronic band structure; X-ray and gamma-ray spectroscopy;

D O I：

10.1016/0038-1098(95)00826-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have measured the Si L-emission band of hexagonal CrSi2 and for the first time this spectrum has been calculated. We have found that simple ab initio pseudopotential electronic structure calculation yields good agreement with experiment. In view of our results the differences between the experimental data and calculated density-of-states curves in the work of Weijs et al. are not due to self-energy effects.

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收藏

页码：435 / 437

页数：3

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