Effect of rare earth doping on sol-gel derived PZT thin films

被引：6

作者：

Majumder, SB ^{[1
]}

Dobal, PS ^{[1
]}

Roy, B ^{[1
]}

Bhaskar, S ^{[1
]}

Katiyar, RS ^{[1
]}

机构：

[1] Univ Puerto Rico, Dept Phys, San Juan, PR 00931 USA

来源：

FERROELECTRICS LETTERS SECTION | 2001年 / 28卷 / 3-4期

关键词：

PZT; thin film; rare earth doping; sol-gel; Raman scattering;

D O I：

10.1080/07315170108202952

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have studied the effect of rare earth dopants (Nd, Gd and Cc) on the phase formation behavior and electrical properties of sol-gel derived Pb-1.05(Zr0.53Ti0.47)O-3 thin films. In all these films the perovskite phase is obtained up to 5 at% doping and beyond that pyrochlore phase was found to coexist with the perovskite phase. Ce and Gd doping(1-2 at%) exhibited improved ferroelectric and dielectric properties as compared to the undoped PZT films. Nd doping (2 at%) was found to be effective to increase the retained switchable polarization of undoped PZT from 63% to 84%. The transition temperature of undoped PZT film was found to be reduced with Nd doping. The Nd doped films also exhibited typical relaxer behavior and a diffuse phase transition, characteristic of the relaxer material. Introduction of Nd into the PZT lattice probably introduces disorder in the B site of ABO(3) lattice which causes the observed relaxer behavior.

引用

页码：85 / 92

页数：8

共 12 条

[1]

Chae BG, 1996, INTEGR FERROELECTR, V13, P379

[2] Structural studies of Nd-modified lead zirconate titanate ceramics between 11 and 680 K at the morphotropic phase boundary [J].