Domain switching in ferroelectric ceramic materials under combined loads

被引:28
|
作者
Achuthan, A [1 ]
Sun, CT [1 ]
机构
[1] Purdue Univ, Sch Aeronaut & Astronaut, W Lafayette, IN 47907 USA
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.1925327
中图分类号
O59 [应用物理学];
学科分类号
摘要
An experimental study to investigate the various characteristics of the nonlinear behavior of a ferroelectric ceramic material under different electrical and mechanical loading conditions is reported. The nonlinear strain behavior under different loading conditions is obtained and used for studying the effect of residual stress, developed in the ferroelectric ceramic material during manufacture, on domain switching under applied loads. First, the behavior at low electric field and mechanical stress are studied by comparing the linear piezoelectric properties measured from the strain responses under mechanical and electrical loading with those measured by resonance method. This is followed by an investigation on the mechanism of polarization reversal due to cyclic electric field. Based on the observed large magnitude of strain and the comparison of the magnitude of the sum of transverse strains with the magnitude of strain in the poling direction it is concluded that polarization reversal due to cyclic electric field in the ferroelectric material at morphotropic phase boundary is the result of two successive 90 degrees domain switchings of the individual domains rather than a direct 180 degrees domain switching. Finally, two types of combined loading experiments were conducted to investigate the residual stress effect on the mechanism of domain switching. The behavior under combined loading shows many interesting characteristics. An attempt is made to explain the characteristics of the nonlinear ferroelectric behavior observed in the present experimental study based on the effect of residual stress on domain switching. (C) 2005 American Institute of Physics.
引用
收藏
页数:8
相关论文
共 50 条
  • [1] Domain switching in ferroelectric ceramic materials under combined loads
    Achuthan, A.
    Sun, C.T.
    Journal of Applied Physics, 2005, 97 (11):
  • [2] Effect of residual stresses on domain switching in ferroelectric ceramic materials
    Achuthan, A
    Sun, CT
    SMART STRUCTURES AND MATERIALS 2004: ACTIVE MATERIALS: BEHAVIOR AND MECHANICS, 2004, 5387 : 379 - 389
  • [3] Domain-Switching Criteria for Ferroelectric Materials Subjected to Electrical and Mechanical Loads
    Chin-Teh, Sun
    Achuthan, Ajit
    Journal of the American Ceramic Society, 2004, 87 (03): : 395 - 400
  • [4] Domain-switching criteria for ferroelectric materials subjected to electrical and mechanical loads
    Sun, CT
    Achuthan, A
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2004, 87 (03) : 395 - 400
  • [5] Cracking in ferroelectric ceramic actuators caused by domain switching
    Jeong, KM
    Beom, HG
    INTERNATIONAL JOURNAL OF APPLIED ELECTROMAGNETICS AND MECHANICS, 2005, 22 (3-4) : 213 - 220
  • [6] Homogenization modeling of domain switching in ferroelectric materials
    Uetsuji, Yasutomo
    Hata, Tetsuya
    Kuramae, Hiroyuki
    Tsuchiya, Kazuyoshi
    ACTA MECHANICA, 2014, 225 (10) : 2969 - 2986
  • [7] Homogenization modeling of domain switching in ferroelectric materials
    Yasutomo Uetsuji
    Tetsuya Hata
    Hiroyuki Kuramae
    Kazuyoshi Tsuchiya
    Acta Mechanica, 2014, 225 : 2969 - 2986
  • [8] Domain Switching and Energy Harvesting Capabilities in Ferroelectric Materials
    Pruvost, Sebastien
    Hajjaji, Abdelowahed
    Lebrun, Laurent
    Guyomar, Daniel
    Boughaleb, Yahia
    JOURNAL OF PHYSICAL CHEMISTRY C, 2010, 114 (48): : 20629 - 20635
  • [9] A new criterion for domain-switching in ferroelectric materials
    Zhang, ZK
    Fang, DN
    Soh, AK
    MECHANICS OF MATERIALS, 2006, 38 (1-2) : 25 - 32
  • [10] LOADING RATE EFFECT ON THE DOMAIN SWITCHING OF FERROELECTRIC MATERIALS
    Achuthan, Ajit
    Sun, Chin-Teh
    SMASIS2008: PROCEEDINGS OF THE ASME CONFERENCE ON SMART MATERIALS, ADAPTIVE STRUCTURES AND INTELLIGENT SYSTEMS - 2008, VOL 1, 2009, : 539 - 547