A study on current collapse in AlGaN/GaN HEMTs induced by bias stress

被引：198

作者：

Mizutani, T ^{[1
]}

Ohno, Y ^{[1
]}

Akita, M ^{[1
]}

Kishimoto, S ^{[1
]}

Maezawa, K ^{[1
]}

机构：

[1] Nagoya Univ, Dept Quantum Engn, Nagoya, Aichi 4648603, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2003年 / 50卷 / 10期

关键词：

AlGaN/GaN HEMT; bias stress; current collapse; light illumination; series resistance; surface state;

D O I：

10.1109/TED.2003.816549

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Drain current collapse in AlGaN/GaN HEMTs has been studied systematically by applying bias stress to the device. The collapse was suppressed by light illumination with energy smaller than the bandgap. The position dependence of the light illumination and the measurement of series source and drain resistances revealed that the collapse was caused by the surface states between the gate and drain electrodes, which captured electrons injected from the gate. The current collapse was eliminated by the passivation of the device surface with Si3N4 film.

引用

页码：2015 / 2020

页数：6

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