Staggered excitonic resonances of Stark-ladder transitions in an asymmetric double-well GaAs/AlAs superlattice

被引：4

作者：

Imanishi, T ^{[1
]}

Takeuchi, M ^{[1
]}

Kawashima, K ^{[1
]}

Fujiwara, K ^{[1
]}

机构：

[1] Kyushu Inst Technol, Kitakyushu, Fukuoka 804, Japan

来源：

PHYSICA E | 1998年 / 2卷 / 1-4期

关键词：

semiconductor superlattices; Stark effects; photocurrent spectra; excitonic effects;

D O I：

10.1016/S1386-9477(98)00063-0

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Excitonic effects on Stark-ladder transitions have been investigated experimentally and theoretically in a novel asymmetric double-well superlattice consisting of wide and narrow GaAs quantum wells separated by a constant AlAs barrier. In this superlattice strong electron resonance can occur under the applied electric field between the wide and narrow wells. It is found that due to existence of the two different heavy-hole localized stales two types of excitonic resonances which are staggered in field are observed in the low-temperature photocurrent spectra. This field difference in the staggered exciton resonances is rigorously explained by variational calculations of the changes in the direct and indirect exciton binding energies with the field. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：299 / 302

页数：4

共 12 条

[1]

AGULLORUEDA F, 1995, SEMICONDUCTOR SUPERL, P99

[2] EXCITON BINDING-ENERGY IN QUANTUM WELLS [J].