Thermal Stability of Defect Centers in n- and p-type 4H-SiC Epilayers Generated by Irradiation with High-energy Electrons

被引：8

作者：

Reshanov, S. A. ^{[1
]}

Beljakowa, S. ^{[2
]}

Zippelius, B. ^{[2
]}

Pensl, G. ^{[2
]}

Danno, K. ^{[3
]}

Alfieri, G. ^{[3
]}

Kimoto, T. ^{[3
]}

Onoda, S. ^{[4
]}

Ohshima, T. ^{[4
]}

Yan, Fei ^{[5
]}

Devaty, R. P. ^{[5
]}

Choyke, W. J. ^{[5
]}

机构：

[1] ACREO AB, Electrum 236, SE-16440 Kista, Sweden

[2] Univ Erlangen Nurnberg, Lehrstuhl Angew Phys, D-91058 Erlangen, Germany

[3] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan

[4] Japan Atom Energy Agcy, Takasaki, Gunma 3701292, Japan

[5] Univ Pittsburgh, Dept Phys, Pittsburgh, PA 15260 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2 | 2010年 / 645-648卷

关键词：

deep levels; DLTS; electron irradiation;

D O I：

10.4028/www.scientific.net/MSF.645-648.423

中图分类号：

TB33 [复合材料];

学科分类号：

摘要：

This paper comprises a systematic study of the thermal stability of defect centers observed in n- and p-type 4H-SiC by deep level transient spectroscopy (DLTS); the defects are generated by irradiation with high-energy electrons of 170 keV or 1 MeV.

引用

页码：423 / +

页数：2

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