The effect of high voltage on the bend transition in Pi-cells

被引：4

作者：

Lee, Chang-Hun ^{[1
]}

Raynes, E. P. ^{[1
]}

Elston, S. J. ^{[1
]}

机构：

[1] Univ Oxford, Dept Engn Sci, Oxford OX1 3PJ, England

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 15期

关键词：

D O I：

10.1063/1.3502472

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In Pi-cells, applying a high voltage to the initial splay state is known as the simplest method to generate the bend state quickly. It is generally assumed that the higher the applied voltage, the faster the bend transition. However, in some cases, the bend transition speed can be reduced and the transition process can even stop completely as the applied voltage increases. Therefore, in this paper, we consider situations where a higher voltage does not enhance the speed of the bend transition, and why this issue is important for commercial liquid crystal displays. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3502472]

引用

页数：3